電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學新一代半導體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University
Condura.ultraTM無銀AMB氮化硅基板---車規級功率模塊用高性價比解決方案Condura.ultraTM silver free AMB --- cost-effective solution for automotive power module張靖賀利氏電子中國區研發總監ZHANG JingDirector of Innovation China, Heraeus Electronics
