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GaN基光電材料外延與MOCVD反應腔結構關聯性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中國科學院半導體研究所副研究員、中科重儀半導體聯合創始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.

硅襯底GaN基光電材料外延生長Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孫錢中國科學院蘇州納米技術與納米仿生研究所研究員SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

6英寸復合襯底上厚GaN外延生長研究Growth of Thick GaN Epilayers on 150mm Engineered Substrate韓穎中國電子科技集團第十三所高級工程師HAN YingSenior Engineer of Hebei Semiconductor Research Institute

雙閾值耦合AlGaN/GaN HEMT中用于優化Ka波段高電場線性度的多指漏極板研究Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN HEMTs for optimizing linearity at high electrical field in Ka-bands王鵬飛西安電子科技大學Wang PengfeiXidian University

電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學新一代半導體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University

寬帶GaN毫米波新器件研究Research on Broadband GaN Millimeter Wave Devices黃偉復旦大學教授HUANG WeiProfessor of Fudan University

Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM-HEMT compact modelSourabh KHANDELWAL澳大利亞麥考瑞大學教授Sourabh KHANDELWALProfessor of Macquarie University, Australia

35-5V單片集成GaN基DC-DC浮動降壓轉換器A 35-5 V Monolithic integrated GaN-based DC-DC Floating Buck Converter朱昱豪西交利物浦大學ZHU YuhaoXi'an Jiaotong-Liverpool University

無等離子體損傷GaN HEMT極化隔離的設計與優化Design and optimization of polarization isolation toward plasma-damage-free GaN HEMT戴貽鈞中國科學院寧波材料技術與工程研究所DAI YiyunNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences

功率HEMT的p-GaN柵極可靠性及其加固方法GaN Gate Reliability and Its Reinforcement Techniques in Power HEMTs鐘耀宗中國科學院蘇州納米技術與納米仿生研究所助理研究員ZHONG YaozongAssistant Professor of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences

AlGaN/GaN HEMT能帶工程和界面調制AlGaN/GaN HEMT energy band engineering and interface modulation胡衛國中國科學院北京納米能源與系統研究所研究員HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences

p-GaN Gate HEMT器件閾值穩定性及其機理Study of the Physics of Vth Instability of p-GaN Gate HEMT陳匡黎電子科技大學博士ZHOU QiProfessor of University of Electronic Science and Technology of China

RecentProgressoftheMITVirtual-SourceGaNHEMT(MVSG)CompactModelLan WEI加拿大滑鐵盧大學副教授Lan WEIAssociate Professor of University of Waterloo, Canada

Si基GaN器件及系統研究與產業前景Research of GaN-on-Si devices and the related systems于洪宇南方科技大學深港微電子學院院長、教授YU HongyuDeanProfessor of School of Microelectronics at Southern University of Science and Technology

New technologies for efficient and integrated GaN power devicesElison MATIOLI瑞士洛桑聯邦理工學院教授Elison MATIOLIProfessor of ?cole Polytechnique Fdrale de Lausanne, Swiss

GaN HEMT與SIC MOSFET在戶用儲能PCS方向應用優勢Advantages in household energy storage PCS using GaN HEMT and SiC MOSFET https://fanyi.baidu.com/?aldtype=85孔令濤--南京芯干線科技有限公司市場總監

GaN半導體垂直腔面激光器的仿真設計與分析Simulation Design and Analysis of GaN Semiconductor Vertical Cavity Surface Laser張紫輝河北工業大學教授ZHANG ZihuiProfessor of Hebei University of Technology

GaN基微腔激光器的制備Fabrication of GaN based micro-cavity lasers梅洋廈門大學助理教授MEI YangAssistant Professor of Xiamen University

Status and Prospects of GaN-based vertical-cavity surface-emitting lasersTetsuya TAKEUCHI日本名城大學教授Tetsuya TAKEUCHIProfessor of Meijo University,Japan

GaN/SiC功率器件在航天電源的應用前景Application prospect of GaN/SiC power devices in aerospace power supply萬成安北京衛星制造廠有限公司領域總師WAN Chengan Field Chief Engineer of Beijing Satellite Manufacturing Factory Co., Ltd