SiC單晶的坩堝結(jié)構(gòu)及PVT生長(zhǎng)工藝條件的改進(jìn)SiC Single Crystals with Modification of Crucible Structure and Process Condition for PVT GrowthWon-Jae LEE韓國(guó)東義大學(xué)教授、釜山電力半導(dǎo)體研究所所長(zhǎng)Won-JaeLEEProfessor of Dong-Eui University,Director of Busan Power Semiconductor Lab.