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實現(xiàn)超小型全氮化微型LED的納米級材料科學Nanometer-scale Materials Science Enabling Ultra-small All-Nitride Micro-LEDsLarsSAMUELSON瑞典皇家科學院及工程院兩院院士、中國科學院外籍院士、瑞典德隆大學教授、南方科技大學講席教授LarsSamuelsonMember of Royal Swedish Academy of Engineering, Member of Royal Swedish Academy of Sciences，F(xiàn)oreign Member of the Chinese Academy of Sciences, Professor of Lund Univer

基于大失配外延的氮化物第三代半導體材料與器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大學理學部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

用于氮化鎵異質(zhì)外延的高溫PVD氮化鋁緩沖層技術High Temperature PVD AlN e Buffer Layer Technology for GaN Heteroepitaxy

氮化鋁基半導體材料及器件的最新進展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基礎研究實驗室負責人、資深杰出研究員Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation

氨熱法氮化鎵單晶生長研究進展及面臨的挑戰(zhàn)Progress and Challenges in Bulk GaN Crystal Growth by Ammonothermal Method任國強中國科學院蘇州納米技術與納米仿生研究所、研究員REN GuoqiangProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

氮化鋁單晶材料研究進展與應用展望Research Progress and Application Prospect of AlN Single Crystal Materials程紅娟中國電子科技集團第四十六所新材料研發(fā)中心副主任CHENG HongjuanDeputy Director of New Materials Research and Development Center of CETC 46THInstitute

基于量產(chǎn)的氮化鎵基光電子及功率器件的外延建模Modeling of Production-scale Epitaxy for Optical and Power GaN-based Devices LAMBRINAKIMARIIA蘇州思體爾軟件科技有限公司總經(jīng)理LAMBRINAKI MARIIAGeneral Manager of Suzhou STR Software CO.,Ltd.

超寬禁帶半導體氧化鎵和氮化鋁特性研究Research on the Characteristics of Ultra-wide Bandgap Semiconductor GaO and AlN張道華深圳平湖實驗室第四代半導體首席科學家、新加坡工程院院士ZHANG DaohuaChief Scientist of Fourth-generation Semiconductors of Shenzhen Pinghu Laboratory, Academician the Academy of Engineering, Singapore

28GHz氮化鎵基時間調(diào)制波束成形系統(tǒng)28GHz GaN based time modulated beamforming system黃同德南京理工大學副教授HUANG TongdeAssociate Professor of Nanjing University of Science and Technology

氮化鎵推動5G、射頻能源及其他領域的創(chuàng)新GaN Driving innovation in 5G, RF Energy and beyond裴軼蘇州能訊高能半導體有限公司副總裁PEI YiVice President of Dynax Semiconductor, Inc

中高壓（1-10 kV）氮化鎵功率器件新進展New Progress in Medium and High Voltage (1-10 kV) GaN Power Devices張宇昊美國弗吉尼亞理工大學助理教授ZHANG Yuhao Assistant Professor, Virginia Tech University

后快充時代的氮化鎵功率器件產(chǎn)業(yè)化GaN Power Devices Beyond Adapter Applications王榮華潤新微電子（大連）有限公司副總經(jīng)理WANG RonghuaVice General Manager of Runxin Microelectronics

氮化鎵功率器件耐壓理論與電場均勻化技術研究Research on the breakdown theory and electric field homogenization technology of GaN-based Power Devices劉建華南京郵電大學博士

氮化鎵在新能源智能汽車的應用探索與實踐Research of InnoGaN in New-energy Intelligent?Vehicle Applications孟無忌英諾賽科產(chǎn)品應用主任工程師Eric MENGChief Engineer of Product Application for Innoscience

異質(zhì)集成氮化鎵功率模塊的量產(chǎn)制造工藝研究A Fabrication Process for Heterogeneous Integrated GaN Power Modules王文博甬江實驗室研究員WANG WenboProfessor of Yongjiang Laboratory (Y-Lab)

面向AR微顯示應用的超小尺寸氮化物Micro-LED研究Study on ultra-small III-nitride Micro-LEDs for AR applications汪萊清華大學信息電子工程系光電子研究所所長WANG LaiInstitute of Information Optoelectronic Technology, Department of Electronic Engineering, Tsinghua University

Condura.ultraTM無銀AMB氮化硅基板---車規(guī)級功率模塊用高性價比解決方案Condura.ultraTM silver free AMB --- cost-effective solution for automotive power module張靖賀利氏電子中國區(qū)研發(fā)總監(jiān)ZHANG JingDirector of Innovation China, Heraeus Electronics

氮化鎵基激光器和超輻射管研究進展Progress of GaN based laser diodes and superluminescene diodes劉建平中國科學院蘇州納米技術與納米仿生研究所納米器件研究部 研究員LIU JianpingProfessor of Nanodevice Research Department of Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences

氮化物的范德華外延：基底結(jié)構(gòu)、多性能控制和紫外光電器件應用Van der Waals Epitaxy of Nitrides: Substrate Construction, Multi-Properties Control and Ultraviolet Optoelectronic Device Application孫曉娟中科院長春光機所研究員SUN XiaojuanProfessor of Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

超寬禁帶六方氮化硼二維原子晶體及其光電器件Growth of ultra-wide band-gap two-dimensional hexagonal boron nitride for optoelectronic devices張興旺中國科學院半導體所研究員ZHANG XingwangProfessor of Institute of Semiconductors, Chinese Academy of Sciences